25 avenue des martyrs - Grenoble
Veuillez noter que l’horaire du séminaire a changé. Il commencera à 14h au lieu de 15h.
From CMOS transistors to CMOS spin qubits
Marc Sanquer (INAC/PHELIQS/LATEQS CEA & UGA)
Classical digital electronics relies on CMOS transistors. An optimal (speed-power trade off) inverter mobilizes approximately 5,000 carriers charging a capacitance (gate and parasitic interconnect) of typically 10-15F around 0,5V.
It is possible to make the transistor working in the single carrier regime at low temperature  ( even at 300K at the cost of a large process variability, however ) by a slight modification of the CMOS design ( underlapped geometry).
This permits to fabricate a CMOS spin qubit which inherits the figures-of-merit of one of the most advanced CMOS device : the FDSOI nanowire CMOS. Other elements needed to control and read the qubit can also be done within the same technology.
I will show the advantages offered by this technology in the perspective of doing quantum dots and spin quantum bits. I will present briefly the properties of our full-electrical hole CMOS spin qubit  and our ideas to realize a full-electrical electron CMOS spin qubit .
1 M. Hofheinz et al. APL 89, 143504 (2006)
2 R. Lavieville et al. Nano Lett., 15, 2958 (2015)
3 R. Maurand et al. Nature Comm. 7, 13575 (2016)
4 A. Corna et al. in preparation
Contact : Marc Sanquer
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