Simulations of electronic transport in ultra-thin and ultra-short junctionless transistors
Mardi 22 Juin 2010 à 16h00
Amphithéâtre 15 de l'Ecole PHELMA Polygone (anciennement ENSERG)
Baruch Feldman is doing his first postdoctoral appointment at Tyndall National Institute, University College Cork, Ireland.
I will describe our recent applications of the non-equilibrium Green's function (NEGF) method to electronic transport in two different systems. The junctionless Si nanowire (SiNW) transistor was recently fabricated at Tyndall, and has desirable short-channel characteristics, as well as not needing junctions.
We recently predicted that this device can work at scales as small as ~3 nm gate length and ~1 nm SiNW diameter. In such a thin SiNW, dopant delocalization occurs over length scales comparable to the gate length, making the junctionless design more robust against dopant fluctuations, while making junctioned designs difficult to achieve.
I will also discuss our simulations of a junctionless carbon nanotube (CNT) transistor and end the talk with a preview of our forthcoming paper on our NEGF code TIMES.
Ce séminaire sera immédiatement précédé par une intervention de Jim Greer.
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