The standard MOS technology is based on silicon. In order to satisfy the technological requirements of the next generations of transistors as defined by the ITRS roadmap, new materials are currently studied and designed. Graphene nano-ribbons have recently emerged as a highly promising material.

CEA-LETI, one of the most famous R&D centre at the European level is presently active in the development of a graphene-based MOSFET using SOI substrate technology. In complement to experimental physics, atomistic simulation has been recently envisaged to study graphene material embedded in an operational MOS stack.

In close collaboration with VonBraun labs established in Brazil, and within the simulation and characterization laboratory of the nanotechnology department of CEA-LETI in Grenoble/France you will familiarize yourself with nanoelectronics R&D and ab initio methods and tools (DFT and beyond) using the state of the art for computation of electronic structures combined with advanced numerical techniques.

Using ab initio simulation, the main objective is to study the physical properties of a given graphene nano-ribbon made of several layers of graphene, deposited on a SiO2 surface and cover by an high permittivity oxide like Al2O3. In particular, the understanding of chemical bonding and the most stable defective structures is one of the current challenges. Simulation results will therefore predict the electronic and atomic structures for a given geometry. The obtained band structure and density of states will be used for a fine comparison between the ideal graphene and the deposited one.